Growth of germanium–carbide thin film on crystal substrate

Abstract

The formation of germanium-carbide in crystalline germanium substrate is studied using the perturbed γ–γ angular correlation (PAC) method. The growth of Ge–C micro-crystalline system in the host matrix was observed after annealing the sample above 450°C in vacuum. The Ge–C complexes have been detected at high dose carbon implantation in germanium (≥1 × 1015cm −2). Information about the lattice locations of the carbon atoms in the host lattice can be obtained via the interaction between carbon atoms with unstable probe nucleus (111In). Several carbon related complexes have been detected in this investigations which can be characterized by unique quadrupole interaction frequencies. The parameters of the hyperfine interactions drawn from the time spectra provide additional information about the formation of Ge–C system in germanium.