Abstract
Self-assembled nano-sized Ge islands have been grown on Si (001) substrates using a solid source molecular beam epitaxy. Detailed island morphological studies at different deposition temperatures and flux rate of as-grown and annealed nanocrystals are reported. Both the alloy composition and in-plane strain in the grown islands have been determined from high-resolution XRD and Raman study. The shape and size of the grown islands and the coarsening mechanism are explicitly discussed with the help of data obtained from AFM topographic images. The current-voltage characteristics of a single isolated island exhibits Coulomb blockade behaviour at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
