7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
7-days of FREE Audio papers, translation & more with Prime
7-days of FREE Prime access
https://doi.org/10.1209/0295-5075/85/58002
Copy DOIJournal: EPL (Europhysics Letters) | Publication Date: Mar 1, 2009 |
Citations: 4 |
We have studied the impact of the hole shape on the growth of Ge dots. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Si buffer layers at different substrate temperatures by molecular-beam epitaxy. Atomic-force-microscopy studies show that for high substrate temperatures, the prepatterned holes are smeared out. A model has been employed to quantitatively analyze the smearing out of the holes. The study further shows that the shape of the holes has a substantial impact on the morphology of the subsequently grown Ge dots, i.e. Ge dots grown in smeared out holes show a tendency towards an inhomogeneous size distribution and the formation of multiple dots in one hole.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.