Abstract
BP epitaxial layer has been successfully grown on silicon(100) substrates with a dimension of 10×10 mm 2. The layer obtained is markedly flat and continuous. The thickness was 4.56 μm during 2 h growth process. To elucidate the possibility to grow a zinc blende GaN layer on BP, epitaxial growth of GaN has been carried out. A 100% cubic GaN was successfully obtained.
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