Abstract
AbstractWe report on a new planetary hotwall research system with independent control of the ceiling and susceptor temperatures. This allows a study of the influence of an actively heated ceiling during a MOCVD process. It was found that the temperature profile across the substrate becomes more uniform when the ceiling temperature is increased while maintaining the same susceptor surface temperature.The parasitic coating on the ceiling was found to be stable and no source of particles up to 1050 °C. The influence of the ceiling temperature on the depletion profile and the possibility to manipulate it was investigated. Good thickness homogeneity of 1.35% (1·σ) on a 4″ sapphire wafer was achieved with excellent XRD results of 206 arcsec for the (0002) reflex and 272 arcsec for the (10‐12) reflex for a 4.7 µm thick GaN film. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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