Abstract
Gallium nitride (GaN) is a compound semicon-ductor with a direct, wide bandgap (3.5 eV at 300K) and a large saturated electron drift veloc-ity. This unique combination of properties pro-vides the potential for fabrication of short wave-length (near UV and blue) semiconductor lasers, LEDs and detectors as well as transit-time-limited (IMPATT, etc.) microwave power amplifiers from this material. However, all GaN previously pro-duced has possessed a high n-type carrier concen-tration which has limited its potential. This phenomenon has been almost invariably associated with the presence of nonequilibrium nitrogen va-cancies. This paper reports growth of GaN by mod-ified MBE techniques in order to reduce the nitro-gen vacancies. The primary advantages of these MBE-based techniques are low growth temperature and high nitrogen activity. A standard effusion cell was used for the gallium source, but for ni-trogen, a microwave glow discharge was used to ac-tivate the nitrogen prior to deposition. The films were deposited on (100) 3-SiC and (0001) Al203 substrates. Growth results and preliminary film characterization will be presented.
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