Abstract
The growth of single crystals of GaAs is discussed with reference to the horizontal zone melt technique. The crystalline perfection and polarity of grown crystals can be determined from a study of edge dislocations revealed on {111} by an HF, H2O2 etchant. Evidence of good thermal control during crystal growth is found from a correlation between the incidence of dislocations and the shape of the freezing interface. Dislocation densities can be reduced to a very low order by careful control of growth conditions.
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