Abstract
Ga x In 1− x P was grown over the whole composition range (0≦ x≦1) on InP, GaAs, and GaP substrates by OMVPE using trimethylindium (TMIn), trimethylgallium (TMGa), and tertiarybutylphosphine (TBP) in a horizontal, cold-wall, and atmospheric pressure reactor with an RF-heated graphite susceptor. The allow composition x versus input mole fraction {[TMGa]/([TMGa]+ [TMIn])} curve showed a slight upward bowing, while the growth rate versus input mole fraction curve showed a large downward bowing. The surfaces of homoepitaxial InP and GaP were specular and featureless. The surfaces of GaInP lattice-matched with GaAs were slightly rougher but free of particles.
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