Abstract
Thin film InP/Si substrate was fabricated using direct wafer bonding technique. GaInAs/InP MQW layers were grown on this substrate by low pressure metalorganic vapor phase epitaxy (MOVPE) growth. Scanning electron microscope (SEM) photographs of the substrate after MOVPE growth show that the MQW layers were grown over the InP/Si substrate, and poly-crystals were observed where the Si substrate was exposed. And we have obtained almost the same photoluminescence (PL) intensity from the GaInAs/InP MQW layers on InP/Si substrate compared to those on InP substrate. According to the X-ray diffraction measurement, a slight tensile strain at the bonded interface due to the difference of thermal expansion coefficient of the InP substrate and Si substrate is observed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
