Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

Chaldyshev V V Chaldyshev V V,Kolesnikov A V Kolesnikov A V,Popova T B Popova T B,Preobrazhenskii V V Preobrazhenskii V V,Putyato M A Putyato M A,Semyagin B R Semyagin B R,Ushanov V I Ushanov V I

doi:10.21883/sc.2022.03.53057.9764

Growth of GaAs-=SUB=-1-x-=/SUB=-Bi-=SUB=-x-=/SUB=- layers by molecular-beam epitaxy

Chaldyshev V V Chaldyshev V V, Kolesnikov A V Kolesnikov A V + Show 5 more

https://doi.org/10.21883/sc.2022.03.53057.9764

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Journal: Semiconductors

Publication Date: Jan 1, 2022

Affiliation: Ioffe Institute, Institute of Semiconductor Physics, Russian Academy of Sciences

#Molecular-beam Epitaxy #Bismuth Incorporation + Show 8 more

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Abstract

By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0<x<0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers. Keywords: gallium arsenide, bismuth, molecular-beam epitaxy, bandgap.

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