Abstract
AbstractGaAs1–xBix/GaAs multi‐quantum well (MQW) structures were grown for the first time by molecular beam epitaxy (MBE). Successful growth of MQWs was demonstrated by observing clear satellite peaks in high‐resolution X‐ray diffraction (HR‐XRD) measurements. Photoluminescence (PL) emission at room temperature (RT) was observed from the MQWs. The peak energy of RT PL emitted from GaAs0.948Bi0.052/GaAs MQWs increased with decreasing thickness of the well layer, which implies quantum size effect. The MQW structures were thermally stable even after annealing up to 800 °C, and the PL emission was observed even after annealing up to 600 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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