Abstract
GaAs1-xBix/AlyGa1-yAs (0<x<0.05, 0<y<0.26) multi-quantum-wells (MQWs) have been successfully grown by molecular-beam epitaxy. The intensity oscillation and streaky patterns of in situ reflection high-energy electron diffraction suggested the layer-by-layer growth of GaAs1-xBix/AlyGa1-yAs MQWs. Clear satellite peaks attributed to periodical structures were observed in high-resolution X-ray diffraction measurements. The cross-sectional transmission microscopy images and secondary-ion mass spectrometry depth profile showed that GaAs1-xBix/AlyGa1-yAs MQWs with a smooth interface can be fabricated without distinct segregation.
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