Abstract
Highly uniform GaAs VPE layers with a thickness variation of less than ±1% were successfully grown by the conventional AsCl 3-Ga-H 2 system on large substrates having an area of about 20 cm 2. It was found that the growth of highly uniform layers can be achieved at the lower temperature range of 670 to 700°C in the kinetically limited region. It was also found that the uniformity of grown layers is influenced by the AsCl 3 mole fraction and that optinum AsCl 3 mole fractions exist in a relatively narrow region depending on the growth temperature.
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