Abstract
Heteroepitaxial growth of GaAs has been successfully achieved for the first time using migration-enhanced epitaxy (300 °C) on HF treated Si substrates which have been subjected to an initial in situ pre-heat treatment in the range of 350–620 °C and without the customary high-temperature Si oxide desorption step. High quality GaAs on Si exhibiting double-crystal x-ray rocking curve full-width at half-maximum value of 280 arcsec was obtained by using two-step growth technique MEE(300 °C)/MBE (580 °C). Secondary-ion mass spectrometry studies indicated 0.05 (monolayer) ML of oxygen at the interface of GaAs and HF treated Si substrate. The photoluminescence spectra at 10 K for GaAs grown on HF treated Si substrates was dominated by sharp excitonic related peaks and no carbon acceptor related emission could be detected.
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