Growth of GaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

Abstract

AbstractSelf‐catalyzed GaAs nanowires (NWs) were grown on a Si(111) substrate via molecular beam epitaxy (MBE) using a vapor‐liquid‐solid mechanism under an alternating supply of Ga and As. Compared to GaAs NWs grown using the conventional MBE method, the length and diameter of the GaAs NWs grown with an alternating supply of Ga and As were longer and narrower. In addition, the formation of polycrystals on the substrate was decreased, and it was possible to grow the GaAs NWs at a lower temperature using the alternating method. Furthermore, an increase in the formation of twin boundaries (TBs) in the GaAs NWs was observed. The effect of using an alternating supply of Ga and As on the shape and formation of TBs is also discussed. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)