Abstract
The metalorganic source modulation epitaxy (MOSME) method for growth of heteromaterials with large lattice mismatch is first introduced. By combination of the MOSME technique and a two-step temperature raising method, a high quality GaAs epilayer on InP substrate is obtained. Raman spectroscopy and X-ray diffraction are used to characterized crystalline quality and interfacial strain in GaAs-on-InP heterostructures. It is concluded that the lattice relaxation is confined within the heterointerface; therefore, dislocation in the GaAs epilayer are greatly reduced. Some residual tensile strain arises from the incomplete tensile relaxation and different thermal-expansion coefficient.
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