Abstract
Area selective epitaxy of antidot structures of GaAs/InAs heterostructures on GaAs substrates masked by SiO2 has been investigated by solid-source molecular beam epitaxy. 100-nanometer-scale antidot structures have successfully been grown by a migration-enhanced deposition sequence. When the diameter of a SiO2-covered hole is larger than 150 nm, the sidewalls exhibit triangular shapes because of the formation of inclined {110} facets. However, when the diameter is reduced below this value, the {110} facets disappear from the sidewall. Instead, facet-free vertical sidewalls appear, implying the importance of surface tension during growth on small-diameter holes. Longitudinal resistance in Hall-bar samples with the antidot structure shows prominent fluctuation in the magnetic field between 0 and 2 T.
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