Abstract
We report the growth of GaAs homoepitaxial films from trimethylgallium and arsine in a multi-wafer rotating disk reactor. In this configuration the substrates are mounted on a disk that is spun at high speed (> 1000 rpm) in a sub-atmospheric (<100 Torr) environment. The spinning disk pumps the reactant and carrier gases radially outwards; under optimum conditions, convective recirculating cells are avoided, thus facilitating rapid transitions in doping and composition in the grown layers. In this paper we look at the morphology, growth rate and electrical properties of the GaAs epitaxial layers as a function of substrate temperature, V/III ratio, dopant type, spin speed and hydrogen carrier flow conditions. These results are compared with those obtained in conventional MOCVD reactors. Silicon and tellurium doping over a wide range of carrier concentrations has been achieved with excellent mobilities and uniformity across the wafers. Preliminary results on MESFET's fabricated from n +/n/buffer structures show good device characteristics.
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