Abstract
Bicrystals of gallium arsenide have been grown by the technique of organometallic, vapor phase epitaxy on substrates cut from Czochralski-grown germanium bicrystals. Both 〈110〉 and 〈001〉 tilt boundaries have been grown. Experimental illustrations of the Σ=3 and Σ=5 grain boundaries are presented. The grain boundaries tend to facet along well-defined planes but closely reproduce the misorientation of the seed bicrystal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
