Abstract
The use of Lewis acid-base adducts as MOVPE precursors for the growth of InP in a simple small scale apparatus has been reported previously. This paper describes an extension of the method to the growth of ternary and quaternary compounds of the gallium-indium-arsenic-phosphorus system. A description is given of the growth apparatus used, indicating modifications made to provide precise control of the input concentrations of the source species both at the start and during growth. The relationships between gas phase composition and solid composition for the growth of GaInAs and GaInAsP on InP are reported. The epitaxial layer quality is discussed with reference to double crystal X-ray rocking curves, morphology and electrical and luminescent properties. The importance of the interface composition control in the growth of heterostructures is demonstrated.
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