Abstract
Extremely flat, two-bilayer-high Bi(110) film was grown on a Si(111)√3 × √3-B substrate by two-step growth. Round amorphous islands nucleated during the initial deposition of Bi atoms at 90 K. The islands became larger and transformed into atomically flat, two-bilayer-high Bi(110) islands at a critical size (40 nm2) in subsequent annealing. The Bi(110) islands extended laterally, and the substrate was finally covered by an extremely flat, two-bilayer-high Bi(110) film at room temperature. Surface X-ray diffraction revealed that the Bi film had a black phosphorous structure.
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