Abstract
Download options Please wait... Article information DOI https://doi.org/10.1039/C004452K Article type Paper Submitted 22 Mar 2010 Accepted 25 May 2010 First published 17 Jun 2010 Download Citation CrystEngComm, 2010,12, 3172-3176 BibTex EndNote MEDLINE ProCite ReferenceManager RefWorks RIS Permissions Request permissions Growth of epitaxial zirconium-doped indium oxide (222) at low temperature by rf sputtering Y. Liang and H. Lee, CrystEngComm, 2010, 12, 3172 DOI: 10.1039/C004452K To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page. If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given. If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page. Read more about how to correctly acknowledge RSC content. Social activity Tweet Share Search articles by author Yuan-Chang Liang Hsin-Yi Lee
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