Abstract
Thin epitaxial films of CoSi 2 have been grown on strained Si 1 − x Ge x Si(001) heterostructures with Ge contents between 20 and 25 at% by molecular beam epitaxy (MBE). Single-oriented CoSi 2(001) films of high crystalline quality ( x min = 4.6%) and smooth surface morphology with low resistivities (17 μΩ · cm) could be obtained using a special template method and an additional thin silicon sacrificial cap layer on top of the Si 1 − x Ge x Si(001) heterostructure. The films were characterized using RHEED, LEED, in-situ AES, SIMS, RBS, SEM, TEM and sheet resistance measurements. The results are compared with films grown on mere Si(001) substrates and on Si 1 − x Ge x Si(001) heterostructures grown without the use of a silicon cap layer. It is demonstrated that a silicon sacrificial cap layer is essential for the growth of high-quality single-domain CoSi 2(001) films on Si 1 − x Ge x Si(100) heterostructures.
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