Growth of epitaxial CeO2buffer layers by polymer assisted deposition

Abstract

ABSTRACTPolymer assisted deposition (PAD) has been reported as a novel CSD approach for thin film growth with improved homogeneity and long stability by forming a metal polymer species. It also offers the interesting possibility of having a library of PAD solutions for each precursor metal and obtaining the required composition by simple mixing. Another potential advantage is the increase in thickness since mechanical stresses are expected to be alleviated during shrinkage in the metalorganic decomposition by the metal-polymer network.Cerium oxide films on YSZ single crystals were grown from water-based solutions containing cerium nitrate, polyethyleneimine and complexing EDTA, in order to explore the benefits of using the PAD approach for growing buffer layers in coated conductors. An ultrafiltration step was performed to remove the non-coordinated species in solution. The degree of purification and efficiency in the cerium recovery was investigated by different techniques. TGA-DTA analysis was used to provide guidance to the best thermal profiles in different atmospheres and specially to diminish the adverse effects of exothermic events during decomposition. Microstructural evolution was tracked by AFM and TEM, while epitaxial fraction was followed by X-ray diffraction. The results show the high importance of choosing the proper atmosphere and the need for tuning of heating ramps to obtain dense, flat and epitaxial ceria films by PAD.