Abstract

Abstract Epitaxial (0 0 l ) CeO 2 films were grown on r -cut sapphire by molecular beam epitaxy. The CeO 2 films grown on as supplied r -Al 2 O 3 substrate constituted of (1 1 1) oriented CeO 2 films. We have found that annealing of r -Al 2 O 3 substrates at 1050 °C for 10 h dramatically enhances the epitaxial growth of (0 0 l ) oriented CeO 2 films on r -Al 2 O 3 substrate. The use of RF activated oxygen source for oxidation during growth further enhances the growth of (0 0 l ) oriented CeO 2 films on r -Al 2 O 3 . High quality epitaxial (0 0 l ) oriented CeO 2 films can be grown on annealed r -Al 2 O 3 substrates by employing lower deposition rate ( 2 ceramic sources. The CeO 2 films were characterized by 2 θ – θ , ω -scan and φ -scan measurements. The CeO 2 films grown on annealed r -Al 2 O 3 substrates showed high crystallinity with rocking curve width of 0.07° for (0 0 2) reflection of CeO 2 and had excellent in-plane epitaxy. These CeO 2 films can be used as buffer layers for the growth of high quality high temperature superconductor films on sapphire substrates.

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