Abstract
Abstract Size, shape and inter-particle distance among embedded nanostructures play a crucial role in their intended applications. Low energy ions give the flexibility to choose the right amount of ions and the depth at which they should be situated which influence the aforementioned factors. In this work, 15 keV Ge ions are implanted into a thermally grown SiO 2 matrix on Si(100) substrates. Three different fluences are chosen (2.5 × 10 15 , 5 × 10 15 and 1 × 10 16 ions/cm 2 ). In-situ growth of Ge clusters inside the matrix has been studied by heating TEM planar specimens of implanted materials up to 800 °C . Phase transformation of amorphous Ge clusters into nanocrystallites has been explained using selected area electron diffraction (SAED) analysis. Special attention has been given to the growth of Ge nanoparticles near the edge. Spatial confinement induced out-diffusion of Ge into vacuum has been studied by monitoring particles near the hole in a planar TEM specimen.
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