Abstract
The conditions required for dislocation-free growth of gallium-phosphide crystals by means of the LEC technique are investigated. Using X-ray topography of longitudinal crystal sections it is found that growth of the crystal cone after the necking-in procedure is the most critical stage. Dislocation-free crystals are grown in the Ga 〈111〉 direction up to a diameter of 15 mm at a pulling speed of 0.20 to 0.25 mm min -1. Doped as well as undoped dislocation-free crystals show a striated distribution of microdefects after preferential etching of P {111} surfaces.
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