Abstract
A multipole plasma source (a hot electron emitter associated with magnetic confinement by permanent magnets) is very suitable for plasma deposition and anodization because it can create a high density (10 10-10 11 cm -3) homogeneous plasma which is free from energetic particles. The anodization kinetics of metals and semiconductors as well as technological applications of the oxide layers were investigated. Space charge effects in the oxide are shown to control the transport of negative oxygen ions and positive substrate ions during growth. Anodization through a thin CaO-stabilized ZrO 2 (CSZ) film results in strong enhancement in the anodization rates of aluminium, tantalum and silicon, probably because of an alteration in the surface chemistry between the plasma and the oxide. The applications of this process are very attractive: the room temperature plasma anodization of silicon resulting in good quality SiO 2, and the protective filter effect of the CSZ layer. A combination of a multipole source and an ultrahigh vacuum system is described and will be used to study the first steps in the interactions of a surface (mostly GaAs) with a plasma.
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