Abstract
Abstract Self-limiting film deposition chemistry (also known as atomic layer epitaxy) of diamond, proposed but never demonstrated, may provide a means for deposition of uniformly thick films on nonplanar substrates at reduced substrate temperatures and may also be useful for fabrication of sharply delineated doped layers during epitaxial growth, for example. We have deposited diamond films on Mo substrates using continuous and interrupted flows of CF4 in hydrogen in a quartz-tube hot-filament reactor. High quality diamond growth was obtained at substrate temperatures between 725 and 850 °C, CF4 concentrations in the range of 3–30%, and pressures between 5 and 45 Torr. Under certain growth conditions, distinct morphological differences were observed in diamond films grown using continuous versus interrupted CF4 gas supplies. Implications of the present results for self-limiting diamond growth are discussed.
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