Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties

Abstract

Abstract Microwave CVD heteroepitaxial diamond film on a 4° off-axis Si(100) substrate is obtained by two stages. The first one is to grow oriented 3c-SiC layers on Si(100) using a non-toxic and non-inflammable (CH3)6Si2NH organic compound carried by hydrogen. The following stage is to grow oriented diamond films on them under the atmosphere of CH4 and H2. In each stage there are bias and growth processions. The micro-Raman and micro-Auger analyses prove that there is a perfect orientation relationship between the film and substrate as following: diamond 〈001〉//3c-SiC〈001〉//Si〈001〉. The Hall effect indicates that the film is a P type, whose resistivity is 9.4×10−3 Ω cm, the Hall coefficient is 2.9 cm3/Q, the hole mobility is 309 cm2/V s and the carrier concentration reaches 2.2×1018 cm−3.