Abstract
A combined metastable electron emission microscopy (MEEM) and photoelectron emission microscopy (PEEM) study has been performed for copper phthalocyanine (CuPc) thin films vacuum deposited on Si(100) with a lithographic SiO2 pattern. The MEEM image of SiO2 pattern edges changed considerably upon deposition of a very small amount of CuPc on the SiO2/Si(100) substrate, whereas no such changes were observed in the PEEM images. The different contrast features in MEEM and PEEM can be the result of different surface sensitivities of these microscopy techniques. The MEEM contrast characteristic for the pattern edges after the CuPc deposition may be ascribed to the difference of the molecular orientation of CuPc which cannot be observed by PEEM.
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