Abstract
ABSTRACTDomain-free epitaxial layer of CuInSe2 has been successfully grown on (lOO) GaAs at the substrate temperature above 470°C. Both TEM and X-ray analyses were performed to verify this result. The CuInSe2/GaAs interface was examined by high resolution TEM. For films high in indium, InSe was identifed by X-ray diffraction. TEM observations showed that the InSe precipitates were rectangular in shape and the habit plane was determined to be (110). Photo-assisted MBE technique had also been used for the growth of CuInSe2 films with high crystalline quality. The epitaxial temperature was significantly reduced to 300°C.
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