Abstract
Growth of CuGaSe 2 chalcopyrite crystals by the traveling heater method (THM) with In solvent has been investigated. The In solutions saturated with stoichiometric CuGaSe 2 solute at temperatures above 850 °C are single phase, but those saturated below 850 °C are found to be separated into two liquid phases. Bulk single crystals have been obtained by the THM growth at 870–980 °C, but the grown crystals become inevitably solid solutions CuGa x In 1− x Se 2 with several per cent CuInSe 2 1− x = 0.04−0.07 , due to the use of In as the solvent.
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