Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System

Abstract

Cubic silicon carbide is a widegap semiconductor whose chemical and physical properties make it applicable for fabrication of electronic devices operating in extreme environments: high temperature, radiation etc. In recent years considerable progress has been achieved in fabrication of semiconductor devices in 3C-SiC. However, the problem of producing good-quality and low-cost substrates of large enough dimensions is still unsolved. CVD- growth of large-area 3C-SiC on other materials, e.g. silicon[l–5], has become extensively used. With a 20% lattice mismatch between the 3C-SiC layer and the Si substrate the growth of good-quality epitaxial layers presents considerable technological difficulties.