Abstract
ABSTRACTMolecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.
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