Abstract
The crystal growth of high melting point oxide crystals by the Czochralski technique is described. The group of crystals was selected with emphasis on laser hosts and includes Ti3+-doped sapphire, gadolinium scandium gallium garnet, and its aluminum analog, yttrium aluminum garnet. Material preparation, growth experiments design considerations, consideration for scaling up the crystal size, and crystal evaluation are included. Results of work leading to growth of 3″ diameter YAG crystals are presented. The paper presents a general approach to crystal growth including crucible material selection, atmosphere control, and fluid dynamics considerations.
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