Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

Abstract

Low-pressure chemical vapor deposition of SiC on carbonized Si from the single-source organosilane precursor silacyclobutane (c-C3H6SiH2,SCB) has been investigated from 800 to 1200 °C. On atmospheric pressure-carbonized (100)Si, SiC films grown at 900 °C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X-ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900 °C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half-maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4–5 μm/h was obtained on Si at 900 °C. Crystalline SiC films have also been grown by SCB at a temperature of 800 °C.