Abstract
We report the fabrication of rhombohedral corundum-structured indium gallium oxide (α-(InxGa1−x)2O3) alloy thin films on sapphire substrates with α-Ga2O3 buffer layers. X-ray diffraction measurement showed the formation of the alloy thin films with In compositions of x=0, 0.05, 0.08, and 0.67. The optical band gaps and resistivity systematically changed depending on x, that is, from 5.3 to 4.0eV and from 109 to 101Ωcm, respectively, suggesting future applications to actual devices. Additionally, CL measurements for α-(In0.08Ga0.92)2O3 alloy thin film suggest the emission from deep levels.
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