Abstract

Mn 3 Si possesses a D03 structure, which is a bcc derivative structure with nearly the same atomic spacing as Cr and NiAl which have been commonly used for longitudinal magnetic recording underlayers. AG(30 nm)/CoCrTa(40 nm)/Mn3Si(x, x=100, 200, 400 nm)/Ag(75 nm) thin films were sputter deposited onto hydrofluoric acid (HF)-etched Si:(001) substrates at elevated temperature. Compared to the 100 and 200 nm thick Mn3Si samples, the XRD spectrum of the 400 nm thick Mn3Si sample shows a significant increase in the intensity of the Mn3Si(002) peak. This suggests that a high volume fraction of the D03 phase was formed. The CoCrTa(112̄0) peak intensity has been found to increase with Mn3Si thickness. As a result, the in-plane coercivity increases as the volume fraction of the D03 phase increases.

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