Abstract
Co-doped indium phosphide crystals were grown by liquid encapsulated Czochralski technique for application in X-ray detection. Semi-insulating state was created by iron–zinc, titanium–zinc and titanium–manganese co-doping using one or two stage growth procedure. Crystals were characterized by temperature-dependent resistivity and Hall coefficient measurements. The resistivity of InP(Fe,Zn) was 5.8×10 7 Ω cm, of InP(Ti,Zn) was 3.7×10 5 Ω cm and of InP(Ti,Mn) was 2.2×10 6 Ω cm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
