Abstract
Co-doped indium phosphide crystals were grown by liquid encapsulated Czochralski technique for application in X-ray detection. Semi-insulating state was created by iron–zinc, titanium–zinc and titanium–manganese co-doping using one or two stage growth procedure. Crystals were characterized by temperature-dependent resistivity and Hall coefficient measurements. The resistivity of InP(Fe,Zn) was 5.8×10 7 Ω cm, of InP(Ti,Zn) was 3.7×10 5 Ω cm and of InP(Ti,Mn) was 2.2×10 6 Ω cm.
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