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Abstract
CdSnP 2 crystals have been grown using the temperature difference method (TDM). A large polycrystalline ingot (15 mm in length and 1 g in weight) which consisted of large single crystal grains (2–4 mm in size) has been obtained. The crystals showed good photoluminescence properties (half-width of 12–16 meV at 77 K). The electron concentration and the mobility at 300 K are 4 x 10 16 cm -3 and 1500 cm 2 /V · s, respectively. These results show that the crystals grown by TDM are of good quality.
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