Abstract

In the present work attempts were made to synthesize indium doped CdS films by fabricating In/CdS bilayers using CBD-CdS on vacuum evaporated In thin films and subsequent air annealing. 135nm CdS films were grown onto 20nm and 35nm indium coated glass substrate employing chemical bath deposition technique. The In/CdS bilayers thus formed were subjected to heat treatment at the temperatures between 200 and 400°C for 4min in the muffle furnace to facilitate indium to diffuse into the CdS films. XRD pattern ascertained no noticeable shift in lattice constant implying grain boundary metal segregation, while secondary ion mass spectrometry indicated the diffusion profile of indium into CdS matrices. Mass spectrometry results showed that substantial diffusion of indium had been taken place within CdS at 400°C. Dark and photocurrent with different illumination time were measured to ascertain the photosensitivity of pure and composite CdS films.

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