Abstract
ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices.
Highlights
In the past decade, significant interest has emerged in the synthesis of one-dimensional semiconductor materials, such as Si [1,2,3], SiC [4,5], GaN [6,7,8], SnO2 [9] and ZnO [10,11,12,13]
ZnO has attracted a great deal of attention because of its potential as a large direct band gap semiconductor (Eg is about 3.35 eV at room temperature) with high exciton binding energy (60 meV)
It reveals that the products consist of high-density ZnO nanowires with typical lengths in the range of several tens of micrometers
Summary
Significant interest has emerged in the synthesis of one-dimensional semiconductor materials, such as Si [1,2,3], SiC [4,5], GaN [6,7,8], SnO2 [9] and ZnO [10,11,12,13] Among these nanoscale semiconductors, ZnO has attracted a great deal of attention because of its potential as a large direct band gap semiconductor (Eg is about 3.35 eV at room temperature) with high exciton binding energy (60 meV). The process does not need any metal catalyst, so it avoids catalyst
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