Abstract
The preparation of SiO2 nanoparticles for the metal-free catalyst growth of carbon nanotubes (CNTs) was investigated. SiO2 nanoparticles were generated by etching Si/SiO2 wafers with 48–50% hydrofluoric acid. Etching duration was varied to study its effects on the generation of the SiO2 nanoparticles. Atomic force microscopy characterization showed that etching at 1min was the most effective considering the significant numbers of SiO2 nanoparticles obtained under this condition. The wafer etched at 1min after chemical vapor deposition at 900°C for 1h demonstrated a low ID/IG from Raman analysis which establishes that CNTs with highly ordered graphitic structures were grown. Raman analysis also showed a strong radial breathing mode peak in the low-frequency range for the substrate following the 1min etching process after the reaction.
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