Abstract
After the CuInSe₂films grown by hot-wall epitaxy method were annealed in Cu-, Se- and In-atmospheres, the point defects were investigated by using the photoluminescence (PL) experiment. In the as-grown CuInSe₂films, the free excitons corresponding to the light hole and the heavy hole have been observed, and their splitting gap was 8.2 meV. The gap is associated with the strain caused by the lattice mismatch between the substrate and the film in the heterojunction growth. By means of thermal annealing in various atmospheres, the (D˚, X) emission was observed to originate from the Vse or CUint. From this emission, the ED value of the donor impurity level is extracted to 0.1950 eV. Also, the emission between the free electrons and the acceptor holes (FA) became a dominant peak after Se atmosphere treatment, and the EA value of the acceptor level is turned out to be 0.2371 eV. Thus, the origin of the FA emission is related to Vcu or Seint. These PL results led us to confirm that CuInSe₂:Se is converted into the optical n-type. In addition, the origin of the donor-acceptor pair emissions is caused by the recombination between donors such as Vse or CUint and acceptors such as Vcu or Seint. Based on these PL results, we have schemed a new energy-level diagram of the recombination process in CuInSe₂.
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