Abstract
〈0 0 0 1〉 oriented Ca 8La 2(PO 4) 6O 2 (CLPA) single crystals with the apatite structure are grown by the Czochralski method. Compositional and lattice parameter uniformity of CLPA is discussed in relation to the growth conditions. Since their lattice constant have excellent matching with three times that of GaN, they are candidates as new substrates for the growth of high-quality GaN epitaxial layers.
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