Abstract
Single phase Ca 2Si layers are successfully grown on Mg 2Si/Si substrates for the first time. These Mg 2Si and Ca 2Si layers are formed by heat treatment of Si and Mg 2Si/Si substrates in Mg and Ca vapor, respectively. The replacement of Ca atoms with Mg in Mg 2Si leads to the formation of single phase Ca 2Si layers. It is confirmed that the formation of other silicide phases is suppressed, when the layers are grown under optimum growth time. The structural property of the resultant layers is examined by X-ray diffraction technique, scanning electron microscopy and transmission electron microscopy.
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