Growth of c-GaN on Si(100)

Abstract

One hundred percent cubic GaN with 2.5 μm thickness was successfully obtained on Si(100) substrates using BP thin buffer layer. BP buffer layer was grown on silicon(100) substrates with a dimension of 10×10 mm 2. The dominant impurity in BP layer incorporated during epitaxial growth was silicon. The conduction type is readily varied depending on gas flow ratio BCl 3/PCl 3. GaN was grown of BP/Si(100) using trimethylgallium and monomethylhydrazine as a starting materials. The growth of BP and GaN and their characterizations will be discussed.