Growth of c-GaN films on the nitridated β-Ga2O3 substrates using RF-MBE

Abstract

Cubic GaN is successfully grown on β-Ga2O3 by molecular beam epitaxy for the first time. Prior nitridation of the (100) β-Ga2O3 single-crystal substrate by exposure to electron cyclotron resonance nitrogen plasma causes the formation of a surficial (001) c-GaN layer, upon which homo-epitaxial growth of c-GaN can be achieved by radio-frequency molecular beam epitaxy. The epitaxial relationship is confirmed by electron microscopy to be (001) c-GaN // (100) β-Ga2O3, [110] c-GaN // [010] β-Ga2O3, and [1-10] c-GaN // [001] β-Ga2O3.