Abstract
AbstractResults on ZnSe, ZnSexS1−x and ZnS crystal growing from the vapour phase up to 7.5 cm3 in volume are described. Crystals were grown on sapphire, ZnS, ZnSexS1−x and quartz glass substrates without a contact of the growing crystal with a growth ampoule and using the molten tin as a heating medium. Large high‐purity crystals with a density of etch pits of 103 cm−2 were obtained They exhibited an effective exciton luminescence and rather high radiation efficiency (30 ± 10% for ZnSe at T = 77 K). This made it possible to use these crystals for fabricating laser screens for a cathode ray tube. The main laser parameters obtained on a ZnSe screen at T = 80 and 300 K using a 75 keV electron beam excitation are presented. The light power output reached 0.8 W at T = 80 K; this allowed to obtain a 10 cd · m−2 TV image of 1.5 × 2 m2 in area.
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